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inchange semiconductor product specification silicon npn power transistors 2SC4418 description with to-220f package high voltage high speed switching applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4418 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 400 v v cesat collector-emitter saturation voltage i c =1.5a ;i b =0.3a 0.5 v v besat base-emitter saturation voltage i c =1.5a ;i b =0.3a 1.3 v i cbo collector cut-off current v cb =500v; i e =0 100 a i ebo emitter cut-off current v eb =10v; i c =0 100 a h fe dc current gain i c =1.5a ; v ce =4v 10 30 c ob output capacitance i e =0; v cb =10v;f=1mhz 30 pf f t transition frequency i e =-0.3a ; v ce =12v 20 mhz switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =1.5a; i b1 =0.15a i b2 =-0.3a v cc =200v ,r l =133 0.5 s
inchange semiconductor product specification 3 silicon npn power transistors 2SC4418 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC4418

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